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      MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 10 V Average Rectified Forward Current (TL = 115 ?C, RJL = 35 ?C/W) IO 1.0 A Non?Repetitive Peak Surge Current (Non?Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg ?55 to 125 ?C Operating Junction Temperature TJ ?55 to 125 ?C Voltage Rate of Change (Rated VR, TJ = 25 ?C) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction?to?Lead (Anode) (Note 1) Thermal Resistance, Junction?to?Tab (Cathode) (Note 1) Thermal Resistance, Junction?to?Ambient (Note 1) R R tjl tjtab Rtja 35 23 277 ?C/W 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) VF TJ = 25 ?C TJ = 100 ?C V (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) 0.280 0.365 0.415 0.175 0.275 0.325 Maximum Instantaneous Reverse Current (Note 2) IR TJ = 25 ?C TJ = 100 ?C mA (VR = 5.0 V) (VR = 10 V) 0.2 0.5 30 60 2. Pulse Test: Pulse Width ? 250 s, Duty Cycle ? 2%. Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1 I F , INSTANTANEOUS FORWARD CURRENT (AMPS) 0.1 0.1 0.2 0.4 0.60.3 0.5 0.7 100?C TJ = 125 ?C 75?C 25?C ?55?C VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1 I F , INSTANTANEOUS FORWARD CURRENT (AMPS) 0.1 0.1 0.2 0.4 0.60.3 0.5 0.7 100?C TJ = 125 ?C 75?C 25?C ?55?C |